Paper
11 January 2011 Dependence of reliability of GaN LEDs on their junction temperatures and ideal factors
Haiping Shen, Xiaoli Zhou, Wanlu Zhang, Muqing Liu
Author Affiliations +
Proceedings Volume 7991, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy II; 799104 (2011) https://doi.org/10.1117/12.888644
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China
Abstract
The relationship between the reliability of GaN LEDs and their junction temperatures and ideal factors is investigated. 20 groups of both blue and white GaN LEDs are tested. Their ideal factors and junction temperatures under 700mA operating current are measured. The measurement methods are introduced. After the measurement, 700mA high current accelerated life test is carried out on the LEDs. Analysis results show that the reliability of the LEDs is strongly dependent on their junction temperatures and ideal factors. For most of the unreliable LEDs with their 50% ALT life less than 400 hours, their ideal factors are higher than 10, or the junction temperatures of the blue LEDs under 700mA are higher than 130°C, and the junction temperatures of the white LEDs under 700mA are higher than 120°C.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haiping Shen, Xiaoli Zhou, Wanlu Zhang, and Muqing Liu "Dependence of reliability of GaN LEDs on their junction temperatures and ideal factors", Proc. SPIE 7991, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy II, 799104 (11 January 2011); https://doi.org/10.1117/12.888644
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Cited by 2 scholarly publications.
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KEYWORDS
Light emitting diodes

Temperature metrology

Reliability

Gallium nitride

Blue light emitting diodes

Accelerated life testing

Epoxies

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