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Proceedings Article

The influence of micron-sized nodules on the electric-field districution in thin-film polarizers

[+] Author Affiliations
Naibo Chen

Tongji Univ. (China) and Zhejiang Univ.y of Technology (China)

Yonggang Wu, Zhenhua Wang, Leijie Ling, Zihuan Xia, Heyun Wu, Gang Lv

Tongji Univ. (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950Q (February 17, 2011); doi:10.1117/12.887565
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

The influence of micron-sized nodules on the electric-field enhancement in the HfO2/SiO2 thin-film polarizers with non-quarter- wave layers at 1053nm and 56° is studied using the finite-difference time-domain electromagnetic modeling. The theoretical results show that the electric-field enhancements in HfO2 material are greater at s polarization than those at p polarization. Nodular defect originating from the large, shallow seed leads to the highest electric-field enhancement while that containing the small, deep seed leads to the lowest electric-field enhancement. The TFP coating designed with the electric-field peaks located in the SiO2 layers has no obvious advantage in decreasing the laser-induced damage than that designed with the electric-field peaks located in the HfO2 layers, once they have the similar nodular defects in them.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Naibo Chen ; Yonggang Wu ; Zhenhua Wang ; Leijie Ling ; Zihuan Xia, et al.
"The influence of micron-sized nodules on the electric-field districution in thin-film polarizers", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950Q (February 17, 2011); doi:10.1117/12.887565; http://dx.doi.org/10.1117/12.887565


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