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Proceedings Article

Comparative investigation of infrared optical absorption properties of silicon oxide, oxynitride and nitride films

[+] Author Affiliations
Shun Zhou, Weiguo Liu

Xi'an Technological Univ. (China) and Xidian Univ. (China)

Changlong Cai, Huan Liu

Xi'an Technological Univ. (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950T (February 17, 2011); doi:10.1117/12.888194
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

Amorphous silicon oxide, silicon oxynitride and silicon nitride films were deposited in a PECVD reactor using silane (SiH4),ammonia (NH3) and nitrous oxide (N2O) as precursor gases. The N2O/NH3 flow ratio was varied in order to obtain different oxynitride compositions. The films were characterized by spectroscopic ellipsometry, XPS and FTIR spectroscopy. The compositions and infrared optical absorption properties of the three different types of films were investigated and compared. Special attention was paid to analyze the Si-O/Si-N bond stretching absorption including the absorption band intensity. It was found that the silicon oxynitride films show a dominant infrared stretching band due to the Si-O/Si-N bond , with the infrared absorption peak located between 860cm-1(11.6μm) for Si-N bond in silicon nitride and 1063cm-1(9.4μm) for Si-O bond in silicon oxide. The position of peak also shifts to a shorter wavelength when increasing the N2O/NH3 flow ratio. The infrared optical absorption properties of the silicon oxynitride films make them well suited for the absorber of uncooled microbolometer detectors

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Citation

Shun Zhou ; Weiguo Liu ; Changlong Cai and Huan Liu
"Comparative investigation of infrared optical absorption properties of silicon oxide, oxynitride and nitride films", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950T (February 17, 2011); doi:10.1117/12.888194; http://dx.doi.org/10.1117/12.888194


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