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Proceedings Article

Structure and luminescence properties of Tb3+-doped Lu3Al5O12 films prepared by Pechini sol-gel method

[+] Author Affiliations
Jian Wang, Siqing Shen, Jianjun Xie, Ying Shi

Shanghai Univ. (China)

Fei Ai

Shanghai Institute of Ceramics (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950Y (February 17, 2011); doi:10.1117/12.888433
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

Tb3+-doped Lu3Al5O12(hereinafter referred to as LuAG:Tb) films were successfully prepared by Pechini sol-gel process and spin-coating technique on carefully cleaned (111) silicon wafer. The microstructure and optical properties of the LuAG:Tb films were studied by X-ray diffraction (XRD), atomic force microscopy(AFM), as well as photoluminescence (PL) spectra. The XRD results showed that the precursor films started to crystallize at about 900°C. All as-calcined LuAG:Tb films showed the Tb3+ characteristic emission bands.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Jian Wang ; Siqing Shen ; Jianjun Xie ; Ying Shi and Fei Ai
"Structure and luminescence properties of Tb3+-doped Lu3Al5O12 films prepared by Pechini sol-gel method", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950Y (February 17, 2011); doi:10.1117/12.888433; http://dx.doi.org/10.1117/12.888433


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