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Proceedings Article

Preparation and properties of ZnO:Mo thin films deposited by RF magnetron sputtering

[+] Author Affiliations
Jianhua Ma, Junhao Chu

Shanghai Institute of Technical Physics (China) and Shanghai Ctr. for Photovoltaics (China)

Yan Liang, Jinchun Jiang, Shanli Wang, Niangjuan Yao

Shanghai Ctr. for Photovoltaics (China)

Xiaojing Zhu

Shanghai Institute of Technical Physics (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951G (February 17, 2011); doi:10.1117/12.888246
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

Mo doped ZnO thin films (ZnO:Mo, MZO) were prepared on quartz glass substrates by RF magnetron sputtering at the lower substrate temperatures (room temperature (RT) and 100°C). Their structural, electrical and optical properties were studied by X-ray diffractometry (XRD), four probe technique, Hall measurement, and UV-VIS-NIR spectrophotometer, respectively. XRD showed that the resultant films were wurtzite structure with c-axis preferential orientation. As the substrate temperatures increasing, the thickness of the film increased and the crystallinity became better. The resistivity of the films were 3.44x10-3 Ω•cm and 3.31x10-3 Ω•cm for the films deposited at RT and 100°C, respectively. The corresponding average transmittance in visible and near IR region (400-1100nm) was 81.7 % and 74.5 %, respectively. In addition, for the film deposited at 100°C, the refractive index (n) and band gap (Eg) were obtained by fitting the transmittance spectra and discussed.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Jianhua Ma ; Yan Liang ; Xiaojing Zhu ; Jinchun Jiang ; Shanli Wang, et al.
"Preparation and properties of ZnO:Mo thin films deposited by RF magnetron sputtering", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951G (February 17, 2011); doi:10.1117/12.888246; http://dx.doi.org/10.1117/12.888246


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