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Proceedings Article

Study of high temperature piezoelectric scandium aluminum nitride thin films

[+] Author Affiliations
Xiaolei Shi, Yigang Chen, Weimin Shi, Linjun Wang

Shanghai Univ. (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951N (February 17, 2011); doi:10.1117/12.888228
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of ScxAl1-xN.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Xiaolei Shi ; Yigang Chen ; Weimin Shi and Linjun Wang
"Study of high temperature piezoelectric scandium aluminum nitride thin films", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951N (February 17, 2011); doi:10.1117/12.888228; http://dx.doi.org/10.1117/12.888228


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