Study of high temperature piezoelectric scandium aluminum nitride thin films

Xiaolei Shi; Yigang Chen; Weimin Shi; Linjun Wang

doi:10.1117/12.888228

18 February 2011 Study of high temperature piezoelectric scandium aluminum nitride thin films

Xiaolei Shi, Yigang Chen, Weimin Shi, Linjun Wang

Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79951N (2011) https://doi.org/10.1117/12.888228
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China

Abstract

AlN has weak piezoelectric property (piezoelectric coefficient d₃₃=5.5pCN^-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize Sc_xAl_1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of Sc_xAl_1-xN.

Citation Download Citation

Xiaolei Shi, Yigang Chen, Weimin Shi, and Linjun Wang "Study of high temperature piezoelectric scandium aluminum nitride thin films", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951N (18 February 2011); https://doi.org/10.1117/12.888228

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