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Proceedings Article

Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)

[+] Author Affiliations
Yoshifumi Ikoma, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka

Kyushu Univ. (Japan)

Hafizal Yahaya

Kyushu Univ. (Japan) and Univ. Teknologi Malaysia (Malaysia)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951Y (February 17, 2011); doi:10.1117/12.888531
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 °C. Square pits with the sizes of ≤0.5 μm were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO2 masks on the front side surface.

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Citation

Yoshifumi Ikoma ; Hafizal Yahaya ; Hirofumi Sakita ; Yuta Nishino and Teruaki Motooka
"Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951Y (February 17, 2011); doi:10.1117/12.888531; http://dx.doi.org/10.1117/12.888531


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