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Proceedings Article

Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy

[+] Author Affiliations
K. Yasuda, M. Niraula, Y. Agata

Nagoya Institute of Technology (Japan)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952T (February 17, 2011); doi:10.1117/12.888229
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

We present a summary of our work towards developing spectroscopic and nuclear imaging detectors using epitaxially grown thick single crystal CdTe layers on Si substrates. High crystalline quality thick single crystal CdTe layers (>260 μm) were obtained where the growth rates could be varied from 10-70 μm/h by adjusting the precursor's flow rates, ratios and the substrate temperatures. Both high resistivity p-like CdTe layers and highly conductive n+-CdTe layers with controlled electrical properties were obtained using iodine as a dopant, but using different growth conditions. Detectors were fabricated in a p-CdTe/n+-CdTe/n+-Si heterojunction diode structure, which demonstrated their energy discrimination capability by resolving energy peaks from a gamma source. Details on the growth characteristics and the fabrication process for a 2-D imaging array are presented.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

K. Yasuda ; M. Niraula and Y. Agata
"Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952T (February 17, 2011); doi:10.1117/12.888229; http://dx.doi.org/10.1117/12.888229


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