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Proceedings Article

Air-annealing effects on SiO2/ITO coating

[+] Author Affiliations
Yiqin Ji

Harbin Institute of Technology (China) and Tianjin Jinhang Institute of Technical Physics (China)

Deying Chen

Harbin Institute of Technology (China)

Weihao Li, Bingjun Wu, Jie Zong, Dandan Liu, Yanmin Zhang

Tianjin Jinhang Institute of Technical Physics (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799502 (February 16, 2011); doi:10.1117/12.888408
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

Indium tin oxide (ITO) thin film with SiO2 protective upper layer prepared by electron beam evaporation was annealed in air up to 300°C. Evolution of transmittance, resistance and surface morphology of this SiO2/ITO coating was studied. Transmittance in visible and near-infrared range both increased while absorption edge exhibited red shift after annealing. Resistance increased monotonously with rising annealing temperature, yet increments became smaller at temperatures above 270°C. Micron-defects were observed on the surface of SiO2/ITO coating after annealing. Enhancement of crystallinity of ITO layer at high temperatures was thought to be responsible for these morphology and resistance evolutions.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Yiqin Ji ; Deying Chen ; Weihao Li ; Bingjun Wu ; Jie Zong, et al.
"Air-annealing effects on SiO2/ITO coating", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799502 (February 16, 2011); doi:10.1117/12.888408; http://dx.doi.org/10.1117/12.888408


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