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Proceedings Article

Electroluminescence from Si nanocrystals by annealing amorphous silicon carbide films

[+] Author Affiliations
Yunjun Rui

Nanjing Univ. (China) and Nanjing Univ. of Technology (China)

Shuxin Li, Chao Song, Hongcheng Sun, Tao Lin, Yu Liu, Jun Xu, Wei Li, Kunji Chen

Nanjing Univ. (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799514 (February 17, 2011); doi:10.1117/12.888225
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

In this work, a-SiC:H films have been fabricated in plasma enhanced chemical vapor deposition system by controlling the gas flux ratio R of methane to silane and subsequently annealed in N2 atmosphere for 1 h at the temperature of 1000°C. Raman spectra showed the formation of Si nanocrystals embedded in amorphous SiC matrix after annealing. Room temperature visible electroluminescence was achieved due to the recombination of electron-hole pairs in Si nanocrystals for the annealed samples. The current-voltage relationships were also investigated and the tunneling mechanism was discussed based on the carrier transport properties.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Yunjun Rui ; Shuxin Li ; Chao Song ; Hongcheng Sun ; Tao Lin, et al.
"Electroluminescence from Si nanocrystals by annealing amorphous silicon carbide films", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799514 (February 17, 2011); doi:10.1117/12.888225; http://dx.doi.org/10.1117/12.888225


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