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Proceedings Article

Oriented SnS thin films formed by nano-multilayer method

[+] Author Affiliations
Zhan Xu, Yigang Chen, Weimin Shi, Linjun Wang

Shanghai Univ. (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799515 (February 17, 2011); doi:10.1117/12.888219
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed by thermal annealing at 400 degrees for 3 hours in Argon atmosphere. The films showed strong (040) crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energy band gap Eg=1.44 ev and a P-type conductivity with a resistivity of 5 Ω•cm.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Zhan Xu ; Yigang Chen ; Weimin Shi and Linjun Wang
"Oriented SnS thin films formed by nano-multilayer method", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799515 (February 17, 2011); doi:10.1117/12.888219; http://dx.doi.org/10.1117/12.888219


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