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Proceedings Article

Preparation of polycrystalline silicon thin films on glass by aluminiuminduced crystallization

[+] Author Affiliations
Jieli Chen, Weimin Shi, Jing Jin, Weiguang Yang, Yang Liao, Yueyang Xu, Linjun Wang, Guangpu Wei

Shanghai Univ. (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799524 (February 17, 2011); doi:10.1117/12.888230
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

Polycrystalline silicon (p-Si) is well-known as the high-efficency, low-cost, and most ideal material for manufacturing photovoltaic devices. In recent years, excimer-laser annealing (ELA), metal-induced crystallization (MIC) and solidphase crystallization (SPC) methods are employed to crystallize amorphous silicon (a-Si). In this paper, a cheap metal induced crystallization method of fabricating p-Si thin films on an ordinary glass substrate was investigated. In this synthesis process, a-Si thin film has been deposited onto glass substrates by Plasma Enhanced Chemical Vapor Deposition (PECVD), and p-Si thin films have been fabricated by aluminium-induced crystallization (AIC) under nitrogen ambient. The effects of annealing time, annealing temperature on the crystallization of a-Si were investigated by X-ray diffraction (XRD) technique. Our results indicate that annealing temperature over 300°C is necessary for crystallization of a-Si which preferred to orientation crystalline Si(111) and this preferred orientation becomes more obvious as increasing of annealing time and annealing temperature. Meanwhile, the longer annealing time can produce more a-Si crystallize completely under same aluminium thickness and annealing temperature.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Jieli Chen ; Weimin Shi ; Jing Jin ; Weiguang Yang ; Yang Liao, et al.
"Preparation of polycrystalline silicon thin films on glass by aluminiuminduced crystallization", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799524 (February 17, 2011); doi:10.1117/12.888230; http://dx.doi.org/10.1117/12.888230


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