Electrical properties of LaB6/PZT/Ag structure with asymmetric interface charge distribution

Y. A. Kafadaryan; N. R. Aghamalyan; S. I. Petrosyan; R. K. Hovsepyan; V. G. Lazaryan; A. S. Kuzanyan

doi:10.1117/12.891048

4 March 2011 Electrical properties of LaB₆/PZT/Ag structure with asymmetric interface charge distribution

Y. A. Kafadaryan, N. R. Aghamalyan, S. I. Petrosyan, R. K. Hovsepyan, V. G. Lazaryan, A. S. Kuzanyan

Proceedings Volume 7998, International Conference on Laser Physics 2010; 79980C (2011) https://doi.org/10.1117/12.891048
Event: International Conference on Laser Physics 2010, 2010, Ashtarak, Armenia

Abstract

Effect of the bottom electrode (LaB₆) on electron emission characteristics (current density, excited voltage), leakage current behavior and polarization-voltage hysteresis of the Ag/PbZr_0.52Ti_0.48O₃/LaB₆/Al₂O₃ capacitor has been firstly experimentally investigated by fabricating PbZr _0.52Ti_0.48O₃ (PZT) and LaB6 films with sol-gel and e-beam evaporation techniques respectively. The current-voltage (I-V) and hysteresis (P-E) characteristics show different charge distribution at the top and bottom interfaces. Leakage current behavior as a function of voltage is interpreted by Schottky charge transport mechanism. Electron emission from the PZT surface under low driving pulses <0.4 V has been detected in vacuum chamber with pressure 4x10^-5 Torr. Current densities in the range of 0-105 μA/cm² have been measured in a diode configuration under 10-22 kV/cm excitation voltages and compared with data reported in the literature.

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Y. A. Kafadaryan, N. R. Aghamalyan, S. I. Petrosyan, R. K. Hovsepyan, V. G. Lazaryan, and A. S. Kuzanyan "Electrical properties of LaB₆/PZT/Ag structure with asymmetric interface charge distribution", Proc. SPIE 7998, International Conference on Laser Physics 2010, 79980C (4 March 2011); https://doi.org/10.1117/12.891048

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