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Proceedings Article

Electrical properties of LaB6/PZT/Ag structure with asymmetric interface charge distribution

[+] Author Affiliations
Y. A. Kafadaryan, N. R. Aghamalyan, S. I. Petrosyan, R. K. Hovsepyan, V. G. Lazaryan, A. S. Kuzanyan

Institute for Physical Research (Armenia)

Proc. SPIE 7998, International Conference on Laser Physics 2010, 79980C (March 04, 2011); doi:10.1117/12.891048
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From Conference Volume 7998

  • International Conference on Laser Physics 2010
  • Aram V. Papoyan
  • Ashtarak, Armenia | October 12, 2010

abstract

Effect of the bottom electrode (LaB6) on electron emission characteristics (current density, excited voltage), leakage current behavior and polarization-voltage hysteresis of the Ag/PbZr0.52Ti0.48O3/LaB6/Al2O3 capacitor has been firstly experimentally investigated by fabricating PbZr 0.52Ti0.48O3 (PZT) and LaB6 films with sol-gel and e-beam evaporation techniques respectively. The current-voltage (I-V ) and hysteresis (P-E ) characteristics show different charge distribution at the top and bottom interfaces. Leakage current behavior as a function of voltage is interpreted by Schottky charge transport mechanism. Electron emission from the PZT surface under low driving pulses <0.4 V has been detected in vacuum chamber with pressure 4x10-5 Torr. Current densities in the range of 0-105 μA/cm2 have been measured in a diode configuration under 10-22 kV/cm excitation voltages and compared with data reported in the literature.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Y. A. Kafadaryan ; N. R. Aghamalyan ; S. I. Petrosyan ; R. K. Hovsepyan ; V. G. Lazaryan, et al.
"Electrical properties of LaB6/PZT/Ag structure with asymmetric interface charge distribution", Proc. SPIE 7998, International Conference on Laser Physics 2010, 79980C (March 04, 2011); doi:10.1117/12.891048; http://dx.doi.org/10.1117/12.891048


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