Paper
26 May 2011 W-band direct detection radiometers using metamorphic HEMT technology
Ingmar Kallfass, Axel Huelsmann, Axel Tessmann, Arnulf Leuther, E. Weissbrodt, M. Schlechtweg, O. Ambacher
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Abstract
At this paper we report on a W-band direct detection radiometer cascading a single-pole four-throw switch with integrated 50 Ω load as a reference noise source, a 3 x 20 dB low-noise amplifier chain, and a broadband Schottky-diode detector. All components are designed and fabricated in 100 nm metamorphic high electron mobility transistor (mHEMT) technology and use waveguide packaging. By using 2 channels of the switch module the Dicke-principle is implemented to drastically reduce the inherent amplifier noise. The multi-throw switch insertion loss is less than 3.5 dB on the chip level and 4.4 dB on the module level. The entire W-band direct detection radiometer chain is also integrated on a single chip and packaged into a waveguide module, which was successfully tested and is now ready for system integration.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ingmar Kallfass, Axel Huelsmann, Axel Tessmann, Arnulf Leuther, E. Weissbrodt, M. Schlechtweg, and O. Ambacher "W-band direct detection radiometers using metamorphic HEMT technology", Proc. SPIE 8022, Passive Millimeter-Wave Imaging Technology XIV, 80220O (26 May 2011); https://doi.org/10.1117/12.883473
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Switches

Radiometry

Sensors

Antennas

Field effect transistors

Waveguides

Amplifiers

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