Si pillar structured thermal neutron detectors: fabrication challenges and performance expectations

R. J. Nikolic; Q. Shao; L. F. Voss; A. M. Conway; R. Radev; T. F. Wang; M. Dar; N. Deo; C. L. Cheung; L. Fabris; C. L. Britton; M. N. Ericson

doi:10.1117/12.885880

13 May 2011 Si pillar structured thermal neutron detectors: fabrication challenges and performance expectations

R. J. Nikolic, Q. Shao, L. F. Voss, A. M. Conway, R. Radev, T. F. Wang, M. Dar, N. Deo, C. L. Cheung, L. Fabris, C. L. Britton, M. N. Ericson

Author Affiliations +

Proceedings Volume 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III; 803109 (2011) https://doi.org/10.1117/12.885880
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

Solid-state thermal neutron detectors are desired to replace ³He tube tube-based technology for the detection of special nuclear materials. ³He tubes have some issues with stability, sensitivity to microphonics and very recently, a shortage of ³He. There are numerous solid-state approaches being investigated that utilize various architectures and material combinations. Our approach is based on the combination of high-aspect-ratio silicon PIN pillars, which are 2 μm wide with a 2 μm separation, arranged in a square matrix, and surrounded by ¹⁰B, the neutron converter material. To date, our highest efficiency is ~ 20 % for a pillar height of 26 μm. An efficiency of greater than 50 % is predicted for our device, while maintaining high gamma rejection and low power operation once adequate device scaling is carried out. Estimated required pillar height to meet this goal is ~ 50 μm. The fabrication challenges related to ¹⁰B deposition and etching as well as planarization of the three-dimensional structure is discussed.

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R. J. Nikolic, Q. Shao, L. F. Voss, A. M. Conway, R. Radev, T. F. Wang, M. Dar, N. Deo, C. L. Cheung, L. Fabris, C. L. Britton, and M. N. Ericson "Si pillar structured thermal neutron detectors: fabrication challenges and performance expectations", Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 803109 (13 May 2011); https://doi.org/10.1117/12.885880

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