Single-photon detectors for ultra-low-voltage time-resolved emission measurements of VLSI circuits

F. Stellari; P. Song; A. J. Weger

doi:10.1117/12.883955

13 May 2011 Single-photon detectors for ultra-low-voltage time-resolved emission measurements of VLSI circuits

F. Stellari, P. Song, A. J. Weger

Proceedings Volume 8033, Advanced Photon Counting Techniques V; 803317 (2011) https://doi.org/10.1117/12.883955
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

Using Time Resolved Emission (TRE) to measure electrical signals inside VLSI CMOS circuits in a non-invasive fashion is a very powerful technique. However, node scaling and the related supply voltage reduction have created significant challenges. In this paper, we investigate the limits of established and prototype single photon detectors for future low voltage applications. In particular the performances of a state of the art InGaAs Single Photon Avalanche Photodiode (SPAD) and Superconducting Single-Photon Detector (SSPD) are reported and compared for low voltage applications using test vehicles fabricated in IBM 65 nm and 45 nm SOI technologies.

Citation Download Citation

F. Stellari, P. Song, and A. J. Weger "Single-photon detectors for ultra-low-voltage time-resolved emission measurements of VLSI circuits", Proc. SPIE 8033, Advanced Photon Counting Techniques V, 803317 (13 May 2011); https://doi.org/10.1117/12.883955

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