Paper
5 May 2011 A MEMS-based thermal infrared emitter for an integrated NDIR spectrometer
C. Calaza, M. Salleras, N. Sabaté, J. Santander, C. Cané, L. Fonseca
Author Affiliations +
Proceedings Volume 8066, Smart Sensors, Actuators, and MEMS V; 806627 (2011) https://doi.org/10.1117/12.887099
Event: SPIE Microtechnologies, 2011, Prague, Czech Republic
Abstract
Micromachined thermal infrared emitters using heavily boron doped silicon as active material have been developed. The proposed fabrication process allows the integration of infrared emitters with arrays of thermopile infrared detectors to achieve integrated non dispersive infrared (NDIR) microspectrometers. A set of emitters with a common radiating silicon slab size (1100x300x8μm3) has been successfully fabricated and characterized. The working temperature of Joule heated radiating elements has been controlled by means of DC or pulsed electric signals, up to temperatures exceeding 800°C. Measured thermal time constants, in the order of 50 ms, enable direct electrical modulation of emitted radiation up to a frequency of 5Hz with full modulation depth. The temperature distribution in the radiating element has been analyzed with infrared thermal imaging.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Calaza, M. Salleras, N. Sabaté, J. Santander, C. Cané, and L. Fonseca "A MEMS-based thermal infrared emitter for an integrated NDIR spectrometer", Proc. SPIE 8066, Smart Sensors, Actuators, and MEMS V, 806627 (5 May 2011); https://doi.org/10.1117/12.887099
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KEYWORDS
Silicon

Infrared radiation

Thermography

Temperature metrology

Aluminum

Resistance

Modulation

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