Paper
13 September 2012 Sol-gel deposited gallium-doped zinc oxide electrode for polymer light-emitting diode applications
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Abstract
We have made a sol-gel deposited gallium-doped zinc oxide (GZO) film as a transparent conductive anode in polymer light-emitting diode (PLED) applications. The GZO films were obtained by spin-coating GZO precursor solutions followed by consecutive thermal annealing in the air and in the hydrogen-rich atmosphere. The resistance of GZO film was reduced to ~100 Ω/□ after thermal annealing in the hydrogen environment. Its surface roughness was sufficiently low (1.159 nm RMS) for depositing other polymer layers. We have fabricated PLEDs with quartz substrate / solution-processed GZO electrode (anode) / PEDOT:PSS (HITL) / SPG-01T (Green polymer light-emitting material purchased from Merck, EML) / Ca (EIL) / Al (Cathode). The fabricated devices showed current efficiency of 3.06 cd/A and power efficiency of 1.25 lm/W at luminance of 1000 cd/m2.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donghyun Kim, Jaeheung Ha, Changhee Lee, and Yongtaek Hong "Sol-gel deposited gallium-doped zinc oxide electrode for polymer light-emitting diode applications", Proc. SPIE 8476, Organic Light Emitting Materials and Devices XVI, 84761W (13 September 2012); https://doi.org/10.1117/12.928910
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KEYWORDS
Organic light emitting diodes

Annealing

Sol-gels

Electrodes

Zinc oxide

Resistance

Polymers

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