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Proceedings Article

Material properties and field-effect transistor characteristics of hybrid organic/graphene active layers

[+] Author Affiliations
Tae-Jun Ha, Jongho Lee, Sk. Fahad Chowdhury, Deji Akinwande, Ananth Dodabalapur

The Univ. of Texas at Austin (United States)

Proc. SPIE 8478, Organic Field-Effect Transistors XI, 847810 (October 11, 2012); doi:10.1117/12.929919
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From Conference Volume 8478

  • Organic Field-Effect Transistors XI
  • Zhenan Bao; Iain McCulloch
  • San Diego, California, USA | August 12, 2012

abstract

We report on the material properties and device characteristics of field-effect transistors (FETs) consisting of hybrid mono-layer graphene/organic semiconductor active layers. By capping with selected organic and polymeric layers, transformation of the electronic characteristics of mono-layer graphene FETs was observed. The off-state current is reduced while the on-state current and field-effect mobility are either unaffected or increased after depositing π−conjugated organic semiconductors. Significantly, capping mono-layer graphene FETs with fluoropolymer improved the on-off current ratio from 5 to 10 as well as increased the field-effect mobility by factor of two compared to plain graphene FETs. Removal of π−conjugated organic semiconductors or fluoropolymer from graphene FETs results in a return to the original electronic properties of mono-layer graphene FETs. This suggests that weak reversible electronic interactions between graphene and π−conjugated organic semiconductors/fluoropolymer favorably tune the material and electrical characteristics of mono-layer graphene. © (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Tae-Jun Ha ; Jongho Lee ; Sk. Fahad Chowdhury ; Deji Akinwande and Ananth Dodabalapur
" Material properties and field-effect transistor characteristics of hybrid organic/graphene active layers ", Proc. SPIE 8478, Organic Field-Effect Transistors XI, 847810 (October 11, 2012); doi:10.1117/12.929919; http://dx.doi.org/10.1117/12.929919


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