Paper
11 October 2012 Graded nanowire ultraviolet LEDs by polarization engineering
Santino D. Carnevale, Thomas F. Kent, Patrick J. Phillips, A.T.M. Golam Sarwar, Robert F. Klie, Siddharth Rajan, Roberto C. Myers
Author Affiliations +
Abstract
Given the large thermal activation energy of acceptors in high %Al AlGaN, a new approach is needed to control p-type conductivity in this material. One promising alternative to using impurity doping with thermal activation is using the intrinsic characteristics of the III-nitrides to activate dopants with polarization-induced charge in graded heterostructures. In this work polarization-induced activation of dopants is used in graded AlGaN nanowires grown by plasma-assisted molecular beam epitaxy to form ultraviolet light-emitting diodes. Electrical and optical characterization is provided, showing clear diode behavior and electroluminescent emission at 336nm. Variable temperature electrical measurements show little change in device performance at cryogenic temperatures, proving that dopant ionization is polarizationinduced rather than thermally activated.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Santino D. Carnevale, Thomas F. Kent, Patrick J. Phillips, A.T.M. Golam Sarwar, Robert F. Klie, Siddharth Rajan, and Roberto C. Myers "Graded nanowire ultraviolet LEDs by polarization engineering", Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, 84670L (11 October 2012); https://doi.org/10.1117/12.970450
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Cited by 5 scholarly publications.
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KEYWORDS
Nanowires

Polarization

Aluminum nitride

Aluminum

Doping

Gallium nitride

Magnesium

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