Modeling the gain and bandwidth of submicron active layer n+-i-p+ avalanche photodiode

Kanishka Majumder; N. R. Das

doi:10.1117/12.925141

15 October 2012 Modeling the gain and bandwidth of submicron active layer n⁺-i-p⁺ avalanche photodiode

Kanishka Majumder, N. R. Das

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854902 (2012) https://doi.org/10.1117/12.925141
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

The electron initiated avalanche gain and bandwidth are calculated for thin submicron GaAs n⁺-i-p⁺ avalanche photodiode. A model is used to estimate the avalanche build-up of carriers in the active multiplication layer considering the dead-space effect. In the model, the carriers are identified both by their energy and position in the multiplication region. The excess energy of the carriers above threshold is assumed to be equally distributed among the carriers generated after impact ionization. The gain versus bias and bandwidth versus gain characteristics of the device are also demonstrated for different active layer thicknesses of the APD.

Citation Download Citation

Kanishka Majumder and N. R. Das "Modeling the gain and bandwidth of submicron active layer n⁺-i-p⁺ avalanche photodiode", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854902 (15 October 2012); https://doi.org/10.1117/12.925141

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