Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT

S. R. Pattanaik; J. Pradhan; S. K. Swain; P. Panda; G. N. Dash

doi:10.1117/12.926991

15 October 2012 Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT

S. R. Pattanaik, J. Pradhan, S. K. Swain, P. Panda, G. N. Dash

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490B (2012) https://doi.org/10.1117/12.926991
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

Material parameters like ionization rate coefficients for electrons and holes play important role in determining the performance of IMPATT device. Accuracy of these material data is significant for the quality of simulation results. In this paper, the influence of small variation in the ionization rate data on the performance of 4H-SiC IMPATT diode has been presented using our computer simulation program.

Citation Download Citation

S. R. Pattanaik, J. Pradhan, S. K. Swain, P. Panda, and G. N. Dash "Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490B (15 October 2012); https://doi.org/10.1117/12.926991

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