A comparative study of high frequency characteristics of SiC-based SDRs

R. K. Parida; A. K. Panda; G. N. Dash

doi:10.1117/12.925107

15 October 2012 A comparative study of high frequency characteristics of SiC-based SDRs

R. K. Parida, A. K. Panda, G. N. Dash

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490I (2012) https://doi.org/10.1117/12.925107
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

A model is developed to study SiC-based IMPATTs to operate at D-band frequency and the device properties of 3C, 4H, 6H-SiC based SDR IMPATTs are compared at the same operating conditions and frequency of operations. A noise analysis model is also developed to compare the noise characteristics of 3C, 4H and 6H SiC-based SDR IMPATTs. The results show that 3C-SiC based SDR IMPATTs have better power delivery capability whereas 4H SiC-based SDR IMPATTs are less noisy. When a power noise tradeoff consider, it is seen that 4H SiC-based SDR IMPATTs have better Noise Measure than the other two polytypes. These results can be used as the first hand information by the experimentalist.

Citation Download Citation

R. K. Parida, A. K. Panda, and G. N. Dash "A comparative study of high frequency characteristics of SiC-based SDRs", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490I (15 October 2012); https://doi.org/10.1117/12.925107

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