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We have investigated the total dose effects of 100
MeV Oxygen ion irradiation on the dc electrical characteristics
of Silicon-Germanium Heterojunction Bipolar Transistors (SiGe
HBTs). The results of oxygen ion irradiation were compared
with Co-60 gamma irradiation in the same total dose range (1
Mrad to 100 Mrad). The results show that even after 100 Mrad
of total dose, the degradation in the electrical characteristics of
SiGe HBT is acceptable from the circuit design point of view.
K. C. Praveen,N. Pushpa,Ambuj Tripathi,D. Revannasiddaiah,P. S. Naik,John D. Cressler, andA. P. Gnana Prakash
"A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12)", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490J (15 October 2012); https://doi.org/10.1117/12.925195
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K. C. Praveen, N. Pushpa, Ambuj Tripathi, D. Revannasiddaiah, P. S. Naik, John D. Cressler, A. P. Gnana Prakash, "A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12)," Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490J (15 October 2012); https://doi.org/10.1117/12.925195