Effects of constant voltage stressing on HfTaOx/SiGe gate stack

S. Mallik; C. Mahata; M. K. Hota; C. K. Sarkar; C. K. Maiti

doi:10.1117/12.926999

15 October 2012 Effects of constant voltage stressing on HfTaOx/SiGe gate stack

S. Mallik, C. Mahata, M. K. Hota, C. K. Sarkar, C. K. Maiti

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854925 (2012) https://doi.org/10.1117/12.926999
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

Ultrathin HfTaO_x gate dielectric has been deposited on Si_0.81Ge_0.19by RF co-sputtering of HfO₂ and Ta2O₅ targets. X-ray photoelectron spectroscopic (XPS) analyses indicate an interfacial layer containing GeO_x, Hf silicate, SiO_x (layer of Hf- Si-Ge-O) formation during deposition of HfTaO_x. No evidence of Ta-silicate or Ta incorporation was found at the interface. X-ray diffraction (GIXRD) measurements show that as-deposited HfTaO_x films are amorphous; however, the crystallization temperature of HfTaO_x film is found to increase significantly after annealing beyond 500 °C (for 5 min) along with the incorporation of Ta (with 18% Ta). It has been found that HfTaO_x gate dielectric on Si_0.81Ge_0.19 exhibit excellent electrical properties with low interface state density (~6.0×1011 cm^-2eV^-1) and hysteresis voltage (<70 mV). Charge trapping/detrapping behavior of the gate stacks has been studied under constant voltage stressing and the degradation mechanism of the dielectrics has been studied in detail.

Citation Download Citation

S. Mallik, C. Mahata, M. K. Hota, C. K. Sarkar, and C. K. Maiti "Effects of constant voltage stressing on HfTaOx/SiGe gate stack", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854925 (15 October 2012); https://doi.org/10.1117/12.926999

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