Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application

Neeraj Dwivedi; Sushil Kumar; Saurabh Dayal; C. M. S. Rauthan; O. S. Panwar; Hitendra K. Malik

doi:10.1117/12.925536

15 October 2012 Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application

Neeraj Dwivedi, Sushil Kumar, Saurabh Dayal, C. M. S. Rauthan, O. S. Panwar, Hitendra K. Malik

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85493A (2012) https://doi.org/10.1117/12.925536
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

In this work, self bias variation, nitrogen introduction and oxygen plasma (OP) treatment approaches have been used for tailoring the band gap of hydrogenated amorphous carbon (a-C:H) thin films. The band gap of a-C:H and modified a- C:H films is varied in the range from 1.25 eV to 3.45 eV, which is found to be nearly equal to the full solar spectrum (1 eV- 3.5 eV). Hence, such a-C:H and modified a-C:H films are found to be potential candidate for the development of full spectrum solar cells. Besides this, computer aided simulation with considering variable band gap a-C:H and modified a- C:H films as window layer for amorphous silicon p-i-n solar cells is also performed by AFORS-HET software and maximum efficiency as ~14 % is realized. Since a-C:H is hard material, hence a-C:H and modified a-C:H films as window layer may avoid the use of additional hard and protective coating particularly in n-i-p configuration.

Citation Download Citation

Neeraj Dwivedi, Sushil Kumar, Saurabh Dayal, C. M. S. Rauthan, O. S. Panwar, and Hitendra K. Malik "Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493A (15 October 2012); https://doi.org/10.1117/12.925536

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