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Proceedings Article

First observation of a plasmon-mediated tunable photoresponse in a grating-gated InGaAs/InP HEMT for millimeter-wave detection

[+] Author Affiliations
Nima Nader Esfahani, Robert E. Peale

Univ. of Central Florida (United States)

Walter R. Buchwald

Solid State Scientific Corp. (United States)

Joshua R. Hendrickson, Justin W. Cleary

Air Force Research Lab. (United States)

Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120Y (October 15, 2012); doi:10.1117/12.930359
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From Conference Volume 8512

  • Infrared Sensors, Devices, and Applications II
  • Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya; Arvind I. D'Souza
  • San Diego, California, USA | August 12, 2012

abstract

A tunable resonant photoresponse to millimeter-waves is demonstrated in a grating-gated high electron mobility transistor (HEMT) formed by an InGaAs/InP heterostructure. The gate consists of a metal grating with 9 μm period, which was designed to couple mm-radiation to plasmons in the two-dimensional electron gas (2DEG) of the HEMT. The resonant excitation of plasmons, which shifts with gate-bias, changes the channel conductance. These devices have potential as chip-scale frequency-agile mm-wave detectors, which may be scaled to THz frequencies. © (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Nima Nader Esfahani ; Robert E. Peale ; Walter R. Buchwald ; Joshua R. Hendrickson and Justin W. Cleary
" First observation of a plasmon-mediated tunable photoresponse in a grating-gated InGaAs/InP HEMT for millimeter-wave detection ", Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120Y (October 15, 2012); doi:10.1117/12.930359; http://dx.doi.org/10.1117/12.930359


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