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Proceedings Article

Process development of GaN light emitting diodes with imbedded contacts

[+] Author Affiliations
Ray-Hua Horn

National Chung Hsing Univ. (Taiwan)

Yu-Wei Kuo

National Cheng Kung Univ. (Taiwan)

Proc. SPIE 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting, 848406 (October 15, 2012); doi:10.1117/12.930252
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From Conference Volume 8484

  • Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting
  • Matthew H. Kane; Christian Wetzel; Jian-Jang Huang; Ian T. Ferguson
  • San Diego, California, USA | August 12, 2012

abstract

A wings type imbedded electrode was introduced into the lateral light emitting diodes (WTIE-LEDs) to improve the light shading effect from the metal electrode of LED. The wing type imbedded contact structure was expected to eliminate the light shading of electrode and bonding wire, and further increased the light extraction and light output power. At 100 mA injection current, the WTIE-LED structure enhanced the output power of 41.6% as compared with that of conventional sapphire-based LEDs (CSB-LEDs) Moreover, the output power of the packaged WTIR-LED and CSB-LED is 70 and 88.94 mW, respectively, at the same injection condition. A 27% enhancement of light output power was achieved. Therefore, using the imbedded contact to reduce light shading would be a promising prospective for vertical LEDs to achieve high output power. © (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Ray-Hua Horn and Yu-Wei Kuo
" Process development of GaN light emitting diodes with imbedded contacts ", Proc. SPIE 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting, 848406 (October 15, 2012); doi:10.1117/12.930252; http://dx.doi.org/10.1117/12.930252


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