Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides

Ji Hoon Kim; Sung-Min Hwang; Yong Gon Seo; Doo Soo Kim; Kwang Hyeon Baik; Jung Ho Park

doi:10.1117/12.929523

15 October 2012 Effect of SiN_x interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides

Ji Hoon Kim, Sung-Min Hwang, Yong Gon Seo, Doo Soo Kim, Kwang Hyeon Baik, Jung Ho Park

Author Affiliations +

Proceedings Volume 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting; 84840H (2012) https://doi.org/10.1117/12.929523
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

We investigated the effects of SiN_x interlayers on the structural and electrical properties of nonpolar a-plane (11-20) GaN grown on r-plane (1-102) sapphire substrates by metal–organic chemical vapor deposition (MOCVD). The Nomarski optical microscope images showed that the deposition conditions of the SiN_x layer could strongly affect the a-plane GaN surface morphology due to the different SiN_x coverage. Basal-plane stacking faults (BSFs) and threading dislocation (TD) densities were reduced in the a-plane GaN samples with high SiN_x coverage and multiple SiN_x-treated GaN interlayers. These results indicate that TD reduction is associated with an increase in the 3D growth step and with the blocking of TD propagation. From on-axis (11-20) X-ray rocking curve (XRC) measurements, the anisotropy of full width at half maximum (FWHM) can be attributed to the crystal mosaicity due to insertion of different SiN_x interlayers. The anisotropy of sheet resistance between the c-and m-axis was also clearly seen in a-plane GaN samples with a high density of defects, which was attributed to the BSFs as scattering centers.

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Ji Hoon Kim, Sung-Min Hwang, Yong Gon Seo, Doo Soo Kim, Kwang Hyeon Baik, and Jung Ho Park "Effect of SiN_x interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides", Proc. SPIE 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting, 84840H (15 October 2012); https://doi.org/10.1117/12.929523

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KEYWORDS

Gallium nitride

Anisotropy

Transmission electron microscopy

Crystals

Resistance

Sapphire

Scattering

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