Paper
28 February 2012 Temperature effects on the characterization of new quantum dot dual mode lasers for terahertz generation
B. Gonzalez, H. Lamela, E. Dadrasnia, V. Sichkovskyi, K. Kozhuharov, J. P. Reithmaier
Author Affiliations +
Abstract
In this work, a theoretical and model study of the temperature effects on threshold current, as tuning technique, and the comparison with experimental results of quantum dot (QD) diode lasers is presented. It is well known the dependence of output wavelength with temperature in semiconductor lasers. This property can be highly useful in order to obtain stable and easy tuning lasers getting two different specific wavelengths to achieve signals in the millimetre (mmW) and terahertz (THz) ranges by photomixing. Our model and study over QD lasers allow us to understand the behaviour of temperature inside the device and thus, we can estimate the best characteristics to obtain the desired results.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Gonzalez, H. Lamela, E. Dadrasnia, V. Sichkovskyi, K. Kozhuharov, and J. P. Reithmaier "Temperature effects on the characterization of new quantum dot dual mode lasers for terahertz generation", Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 82550C (28 February 2012); https://doi.org/10.1117/12.910095
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Laser damage threshold

Semiconductor lasers

Quantum dots

Quantum efficiency

Temperature metrology

Quantum wells

Terahertz radiation

Back to Top