Paper
27 February 2012 Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN
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Abstract
The resonator orientation of InGaN-based lasers on semipolar planes influences the optical polarization and the gain. We present gain measurements of semipolar (11-22) laser structures with differently oriented resonators and for various polarization states. The optical polarization state and the thresholds for lasers on different semipolar and nonpolar orientations are compared. The experimental results are accompanied by numerical calculations of the material gain as well as investigation of the surface morphology and resulting waveguide losses in dependence of the crystal orientation.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens Rass, Tim Wernicke, Simon Ploch, Moritz Brendel, Andreas Kruse, Andreas Hangleiter, Wolfgang Scheibenzuber, Ulrich T. Schwarz, Markus Weyers, and Michael Kneissl "Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826218 (27 February 2012); https://doi.org/10.1117/12.907865
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KEYWORDS
Polarization

Crystals

Resonators

Laser resonators

Laser damage threshold

Quantum wells

Gallium nitride

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