Modeling gallium-nitride-based violet lasers for data storage of information technology

Meng-Mu Shih

doi:10.1117/12.911793

27 February 2012 Modeling gallium-nitride-based violet lasers for data storage of information technology

Meng-Mu Shih

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82621A (2012) https://doi.org/10.1117/12.911793
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

This work shows the process of computing coupling coefficients of first-order distributed feedback (DFB) metalsemiconductor quantum-well lasers which emit the violet light for data storage of information technology. The optical waveguide structure for such a laser has semiconductor layers and a built-in metal grating layer. The interface between the metal layer and its neighboring semiconductor layer has a sinusoidal corrugation functioning as the grating. To compute the coupling coefficient of the metal-grating waveguide, a model is constructed by Floquet-Bloch formalism (FB). Ray optics technique (RO) is also used to calculate the coupling coefficients. These two methods have close results.

Citation Download Citation

Meng-Mu Shih "Modeling gallium-nitride-based violet lasers for data storage of information technology", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621A (27 February 2012); https://doi.org/10.1117/12.911793

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