High performance 375 nm ultraviolet InGaN/AlGaN light-emitting diodes by using a heavily Si-doped GaN growth mode transition layer

Shih-Cheng Huang; Po-Min Tu; Shun-Kuei Yang; Ya-Wen Lin; Chih-Peng Hsu

doi:10.1117/12.908146

27 February 2012 High performance 375 nm ultraviolet InGaN/AlGaN light-emitting diodes by using a heavily Si-doped GaN growth mode transition layer

Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Ya-Wen Lin, Chih-Peng Hsu

Author Affiliations +

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 826221 (2012) https://doi.org/10.1117/12.908146
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

High performance 375 nm ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) with a heavy Si-doped GaN growth mode transition layer (GMTL) were fabricated by metal-organic chemical vapor deposition (MOCVD). From transmission electron microcopy (TEM) image, the dislocation densities are reduced significantly by using the GMTL technique. The threading dislocation (TD) value of AlGaN grown on GMTL was significantly decreased from the control sample value of 8×10⁸ to 8×10⁷ cm^-2. Furthermore, the internal quantum efficiency (IQE) of the LEDs with GMTL was measured by power-dependent photoluminescence (PL) to be 40.6% higher than ones without GMTL. After vertical-type (size:1mm×1mm) LED chips were fabricated, the output power were measured by integrating sphere detector under 350 mA injection current driving. The output powers of the LEDs with and without GMTL were measured to be 286.7 and 204.2 mW, respectively. As much as 40.4% increased light output power was achieved. The GMTL leads to the superior IQE performance of the LEDs not only in decreasing the carrier consumption at nonradiative recombination centers but also in partially mitigating the efficiency droop tendency. Therefore, forming the GMTL between un-doped GaN and n-AlGaN to reduce dislocations would be a promising prospective for InGaN/AlGaN UV-LEDs to achieve high IQE.n the abstract two lines below author names and addresses.

Citation Download Citation

Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Ya-Wen Lin, and Chih-Peng Hsu "High performance 375 nm ultraviolet InGaN/AlGaN light-emitting diodes by using a heavily Si-doped GaN growth mode transition layer", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826221 (27 February 2012); https://doi.org/10.1117/12.908146

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available