Photolithography simulations are widely used to predict, to analyze and to design imaging
processes in scanners used for IC manufacture. The success of these efforts is strongly dependent
on their ability to accurately capture the key drivers responsible for the image formation. Much
effort has been devoted to understanding the impacts of illuminator and projection lens models on
the accuracy of the lithography simulations [1-3]. However, of equal significance is the role of
the mask models and their interactions with the illuminator models.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation
Jacek K. Tyminski ; Raluca Popescu ; Sven Burger ; Jan Pomplun ; Lin Zschiedrich, et al.
"Finite element models of lithographic mask topography", Proc. SPIE 8326, Optical Microlithography XXV, 83261B (February 21, 2012); doi:10.1117/12.916957; http://dx.doi.org/10.1117/12.916957
