The latest developments in AlGaInN laser diode technology is reviewed for defence applications such as underwater telecommunications, sensor systems etc. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range with high reliability. High power operation of AlGaInN laser diodes is also reviewed. We demonstrate the operation of a single chip, high power AlGaInN laser diode 'mini-array' consisting of a 3 stripe common p-contact configuration at powers up to 2.5W cw in the 408-412 nm wavelength range. Low defectivity and highly uniform TopGaN GaN substrates allow arrays and bars of nitride lasers to be fabricated. Packaging of nitride laser diodes is substantially different compared to GaAs laser technology and new processes and techniques are required to optimize the optical power from a nitride laser bar. Laser bars of up to 5mm with 20 emitters have shown optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor. TopGaN are developing a new range of high power laser array technology over the u.v.- visible spectrum together with new packaging solutions for optical integration.
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S. P. Najda ; P. Perlin ; T. Suski ; L. Marona ; M. Boćkowski, et al.
Latest developments in AlGaInN laser diode technology for defence applications
", Proc. SPIE 8542, Electro-Optical Remote Sensing, Photonic Technologies, and Applications VI, 85421E (November 19, 2012); doi:10.1117/12.978932; http://dx.doi.org/10.1117/12.978932