Gain and phase dynamics in strained quantum well semiconductor optical amplifiers

Cui Qin; XinLiang Zhang

doi:10.1117/12.1000176

21 November 2012 Gain and phase dynamics in strained quantum well semiconductor optical amplifiers

Cui Qin, XinLiang Zhang

Proceedings Volume 8559, Information Optics and Optical Data Storage II; 85590P (2012) https://doi.org/10.1117/12.1000176
Event: Photonics Asia, 2012, Beijing, China

Abstract

Gain and phase dynamic characteristics in the compressive, unstrained and tensile strained InGaAs-InGaAsP quantum well (QW) semiconductor optical amplifiers (SOAs) are theoretically investigated via a detailed model. Based on the calculation of energy band structure, the effects of compressive and tensile strain on the differential gain and the derivative of refractive index change are investigated. It is demonstrated that the compressive strained QW SOA shows the fastest gain recovery rate and the largest phase change. That is because the SOA has the characteristics of the largest differential gain and the smallest derivative of refractive index change. In addition, the ultrafast recovery process due to the carrier heating effect can be enhanced significantly in the tensile strained QW SOA.

Citation Download Citation

Cui Qin and XinLiang Zhang "Gain and phase dynamics in strained quantum well semiconductor optical amplifiers", Proc. SPIE 8559, Information Optics and Optical Data Storage II, 85590P (21 November 2012); https://doi.org/10.1117/12.1000176

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