Paper
3 January 2013 Temperature oscillations in a silicon wafer under constant power of incoherent irradiation by heating lamps in a thermal chamber of RTP set up
Valery I. Rudakov, Aleksey L. Kurenya, Vladimir V. Ovcharov, Valeriya P. Prigara
Author Affiliations +
Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 870006 (2013) https://doi.org/10.1117/12.2018016
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
Abstract
In a silicon wafer, temperature oscillations observed in a thermal chamber of the rapid thermal annealing set up are investigated in the conditions corresponding to a bistable behavior of a wafer. Oscillations with a typical period near ~400 s are observed at temperatures corresponding to the unstable branch of the s-shaped transfer characteristic of the wafer. Temperature behavior of the wafer at the different regimes of heat exchange is analyzed and it is shown that the oscillations depend on the availability of the negative feedback between the wafer and water-cooled pedestal, through which the heat output is released from the wafer. Oscillation excitation mechanism in such a heat system is offered and the theoretic model of the oscillations is derived. Estimations of the oscillation period obtained by the use of the theoretical model fall in the range between 103 and 104 s.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valery I. Rudakov, Aleksey L. Kurenya, Vladimir V. Ovcharov, and Valeriya P. Prigara "Temperature oscillations in a silicon wafer under constant power of incoherent irradiation by heating lamps in a thermal chamber of RTP set up", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870006 (3 January 2013); https://doi.org/10.1117/12.2018016
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KEYWORDS
Semiconducting wafers

Pyrometry

Silicon

Lamps

Bistability

Optical properties

Temperature metrology

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