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Proceedings Article

Numerical model of parallel nano-FET on Coulomb blockade in M55 "magic" crystals

[+] Author Affiliations
Valery A. Zhukov

St. Petersburg Institute for Informatics and Automation (Russian Federation)

V. G. Maslov

St. Petersburg National Research Univ. of Information Technologies, Mechanics and Optics (Russian Federation)

Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870017 (January 8, 2013); doi:10.1117/12.2017306
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From Conference Volume 8700

  • International Conference Micro- and Nano-Electronics 2012
  • Alexander A. Orlikovsky
  • Zvenlgorod, Russian Federation | October 01, 2012

abstract

A model of "parallel" metal-graphene quantum FET nanotransistor with a gate on the Coulomb blockade in the "magic" Ir55 nanocrystals is proposed and designed. This nanotransistor will have a speed of about 2.5 * 1011 Hz and size of 32x32x12 nm3. It is shown that in this model of nanotransistor a source-drain potential is equal to 1.2 V, the threshold for the opening of the gate UG is equal to 0.4 V and the total current in parallel connected 250 elementary single-electron nanotransistors - crystals of Ir55 is 1.5 * 10-5 A. This current is approximately equal to the current in experimental terahertz semiconductor nanotransistors. It is shown that gain coefficient for charge is Kq = 1, and the power gain is equal to KP ~ 3. Such nanotransistor at using inductive-capacitive load could be an element of the integrated circuit - the generator of electro-magnetic waves with a wavelength of 1.2 mm and power density ~ 104 W/cm2. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Valery A. Zhukov and V. G. Maslov
" Numerical model of parallel nano-FET on Coulomb blockade in M55 "magic" crystals ", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870017 (January 8, 2013); doi:10.1117/12.2017306; http://dx.doi.org/10.1117/12.2017306


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