A model of "parallel" metal-graphene quantum FET nanotransistor with a gate on the Coulomb blockade in the "magic" Ir<sub>55</sub> nanocrystals is proposed and designed. This nanotransistor will have a speed of about 2.5 * 10<sup>11</sup> Hz and size of 32x32x12 nm<sup>3</sup>. It is shown that in this model of nanotransistor a source-drain potential is equal to 1.2 V, the threshold for the opening of the gate <i>U<sub>G</sub></i> is equal to 0.4 V and the total current in parallel connected 250 elementary single-electron nanotransistors - crystals of Ir<sub>55</sub> is 1.5 * 10<sup>-5</sup> A. This current is approximately equal to the current in experimental terahertz semiconductor nanotransistors. It is shown that gain coefficient for charge is K<sub>q</sub> = 1, and the power gain is equal to K<sub>P</sub> ~ 3. Such nanotransistor at using inductive-capacitive load could be an element of the integrated circuit - the generator of electro-magnetic waves with a wavelength of 1.2 mm and power density ~ 10<sup>4</sup> W/cm<sup>2</sup>.© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation
Valery A. Zhukov and V. G. Maslov
"Numerical model of parallel nano-FET on Coulomb blockade in M55 "magic" crystals", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870017 (January 8, 2013); doi:10.1117/12.2017306; http://dx.doi.org/10.1117/12.2017306
