Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

[+] Author Affiliations
Marc P. Hoffmann, Ronny Kirste, Anthony Rice, Christer-Rajiv Akouala, Ramon Collazo, Zlatko Sitar

North Carolina State Univ. (United States)

Michael Gerhold

US Army Research Office (United States)

Jinqiao Q. Xie, Seiji Mita

HexaTech, Inc. (United States)

Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86311T (February 4, 2013); doi:10.1117/12.2008827
Text Size: A A A
From Conference Volume 8631

  • Quantum Sensing and Nanophotonic Devices X
  • Manijeh Razeghi
  • San Francisco, California, USA | February 02, 2013

abstract

The growth, fabrication, and properties of GaN/AlN/sapphire with periodically poled surface polarity for second harmonic generation are investigated. The periodic inversion of the surface polarity is achieved by the growth of a thin AlN buffer layer and subsequent partial removal by using either wet etching with potassium hydroxide (KOH) or reactive-ion etching (RIE). GaN growth on these substrates by MOCVD leads to Gapolar GaN on the AlN buffer and N-polar GaN on the bare sapphire. Using atomic force microscopy and scanning electron microscopy, it is demonstrated that a sufficient combination of H2 and NH3 surface treatment before the growth of the GaN layers removes surface defects introduced by RIE etching. Thus, films with comparable quality and properties independent of the etching technique could be grown. However, in contrast to RIE etching, the interfaces between the Ga-polar and N-polar GaN is rough if KOH etching is applied. Thus, it is concluded that MOCVD in combination with RIE etched AlN/sapphire substrates can be a versatile process to fabricate GaN with periodically poled surface polarity as desired for UV light generation via frequency doubling. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Marc P. Hoffmann ; Michael Gerhold ; Ronny Kirste ; Anthony Rice ; Christer-Rajiv Akouala, et al.
" Fabrication and characterization of lateral polar GaN structures for second harmonic generation ", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86311T (February 4, 2013); doi:10.1117/12.2008827; http://dx.doi.org/10.1117/12.2008827


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.