High-power flip-chip-bonded silicon hybrid laser for temperature-control-free operation with micro-ring resonator-based modulator

S. Tanaka; S.-H. Jeong; T. Akiyama; S. Sekiguchi; T. Kurahashi; Y. Tanaka; K. Morito

doi:10.1117/12.2002280

27 February 2013 High-power flip-chip-bonded silicon hybrid laser for temperature-control-free operation with micro-ring resonator-based modulator

S. Tanaka, S.-H. Jeong, T. Akiyama, S. Sekiguchi, T. Kurahashi, Y. Tanaka, K. Morito

Author Affiliations +

Proceedings Volume 8630, Optoelectronic Interconnects XIII; 86300Q (2013) https://doi.org/10.1117/12.2002280
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

A silicon (Si)-based, large-scale optical I/O chip will be a key device for a large-bandwidth, low-cost optical interconnection employed in future high-performance computing systems. For these Si optical I/O chips, a significant improvement in energy cost is strongly expected, hence, the use of micro ring-resonator (RR) based modulator is assumed to be a promising approach. In order to handle a narrow and temperature-dependent operation bandwidth of the RR-based modulator, we have proposed a novel Si transmitter that uses a cascaded RR MZ modulator and RR-based Si hybrid laser. The RR-based Si hybrid laser is an external cavity laser integrating an InP SOA and a Si mirror chip comprising a RR and DBR mirror. The SOA is flip-chip bonded to the Si mirror chip utilizing a precise flip-chip bonding technology. The fabricated Si hybrid laser exhibited a low threshold current of 9.4mA, a high output power of <15 mW, and a large wall-plug efficiency of 7.6% at 20°C. In addition, the device maintained a stable single longitudinal mode lasing and a low RIN level of <-130 dB/Hz for 20-60°C. We also fabricated an integrated Si transmitter combining a cascaded RR MZ modulator and RR-based Si hybrid laser. The 20-RR cascaded MZ modulator exhibited a 1-nm operation bandwidth using multiple low-Q RRs. The modulator was driven with 10Gbps PRBS signal. For a temperature range between 25 and 60°C, the lasing wavelength exhibited a red-shift of 2.5 nm, nevertheless, we confirmed clear eye openings without adjusting the operating wavelength of the modulator.

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S. Tanaka, S.-H. Jeong, T. Akiyama, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito "High-power flip-chip-bonded silicon hybrid laser for temperature-control-free operation with micro-ring resonator-based modulator", Proc. SPIE 8630, Optoelectronic Interconnects XIII, 86300Q (27 February 2013); https://doi.org/10.1117/12.2002280

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