Paper
4 March 2013 Tunable light source with GaN-based violet laser diode
Masaki Omori, Naoki Mori, Norihiro Dejima
Author Affiliations +
Abstract
GaN based violet Laser Diode has been applying for the industrial market with unique high potential characters. It has possibility Replacing Gas lasers, Dye Lasers, SHG lasers and Solid-state Lasers and more. Diode based laser extreme small and low costs at the high volume range. In addition GaN Laser has high quality with long lifetime and has possibility to cover the wide wavelength range as between 375 to 520nm. However, in general, diode based laser could only lase with Longitudinal Multi Mode. Therefore applicable application field should be limited and it was difficult to apply for the analysis. Recently, Single Longitudinal Mode laser with GaN diode has also be accomplished with external cavity by Nichia Corporation. External cavity laser achieved at least much higher than 20dB SMSR. The feature of installing laser is that Laser on the front facet with AR coating to avoid chip mode lasing. In general, external cavity laser has been required precision of mechanical assembly and Retention Capability. Nichia has gotten rid of the issue with Intelligence Cavity and YAG Laser welding assembly technique. This laser has also been installed unique feature that the longitudinal mode could be maintained to Single Mode lasing with installing internal functional sensors in the tunable laser.*1,*2 This tunable laser source could lock a particular wavelength optionally between 390 to 465nm wavelength range. As the results, researcher will have benefit own study and it will be generated new market with the laser in the near future.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaki Omori, Naoki Mori, and Norihiro Dejima "Tunable light source with GaN-based violet laser diode", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86251A (4 March 2013); https://doi.org/10.1117/12.2002000
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Tunable lasers

Sensors

Semiconductor lasers

Collimators

Gallium nitride

Tolerancing

Diodes

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