Analysis of bulk and facet failures in AlGaAs-based high-power diode lasers

Jens W. Tomm; Martin Hempel; Fabio La Mattina; Frank M. Kießling; Thomas Elsaesser

doi:10.1117/12.2003465

4 March 2013 Analysis of bulk and facet failures in AlGaAs-based high-power diode lasers

Jens W. Tomm, Martin Hempel, Fabio La Mattina, Frank M. Kießling, Thomas Elsaesser

Proceedings Volume 8640, Novel In-Plane Semiconductor Lasers XII; 86401F (2013) https://doi.org/10.1117/12.2003465
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Mechanisms are addressed limiting the reliability high-power diode lasers. An overview is given on the kinetics of the Catastrophic Optical Damage (COD) process, which is related to highest output powers. It involves fast defect growth fed by re-absorption of laser light. Local temperatures reach the order of the melting temperature of the waveguide of the device. The process starts either at a facet or at any weak point, e.g., at extended defects in the interior of the cavity.

Citation Download Citation

Jens W. Tomm, Martin Hempel, Fabio La Mattina, Frank M. Kießling, and Thomas Elsaesser "Analysis of bulk and facet failures in AlGaAs-based high-power diode lasers", Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86401F (4 March 2013); https://doi.org/10.1117/12.2003465

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available