Paper
4 March 2013 1120nm highly brilliant laser sources for SHG-modules in bio-analytics and spectroscopy
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Proceedings Volume 8640, Novel In-Plane Semiconductor Lasers XII; 86401J (2013) https://doi.org/10.1117/12.2002487
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
Highly brilliant diode lasers at 1120nm with a high optical output power, nearly diffraction limited beam and narrow spectral line width are increasingly important for non-linear frequency conversion to 560 nm. We present experimental results about edge-emitting distributed Bragg reflector (DBR) tapered diode lasers emitting at 1120 nm. The investigated lasers show an output power of up to 8W with a conversion efficiency of about 40%, and a lifetime of more than 5000 h at 5 W. The lasers also exhibit a small vertical divergence <15° full width at half maximum (FWHM), a nearly diffraction limited beam quality, and a narrow spectral line width with FWHM smaller than 10pm. These properties allow the lasers to be used for future second harmonic (SH) generation.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katrin Paschke, Christian Fiebig, Gunnar Blume, Frank Bugge, Jörg Fricke, and Götz Erbert "1120nm highly brilliant laser sources for SHG-modules in bio-analytics and spectroscopy", Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86401J (4 March 2013); https://doi.org/10.1117/12.2002487
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Cited by 5 scholarly publications.
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KEYWORDS
Semiconductor lasers

Laser sources

Diffraction

Near field optics

Semiconducting wafers

Spectroscopy

Laser processing

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