All-silicon and epitaxially grown III-V-on-silicon photodetectors for on-chip optical interconnection applications

Andrew W. Poon; Shaoqi Feng; Yu Li; Yu Geng; Kei May Lau

doi:10.1117/12.2006565

6 March 2013 All-silicon and epitaxially grown III-V-on-silicon photodetectors for on-chip optical interconnection applications

Andrew W. Poon, Shaoqi Feng, Yu Li, Yu Geng, Kei May Lau

Author Affiliations +

Proceedings Volume 8628, Optoelectronic Integrated Circuits XV; 86280E (2013) https://doi.org/10.1117/12.2006565
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

In this paper we review our recent progress in two complementary approaches to photodetectors on silicon photonic chips for on-chip optical interconnection applications, namely epitaxially grown III-V-on-silicon and all-silicon microcavity-enhanced photodetectors, both for the 1550nm wavelengths. On the epitaxially grown III-V-on-silicon photodetectors front, we have demonstrated both normal-incidence and waveguide-butt-coupled p-i-n photodetectors. We simulate the silicon waveguide butt-coupling to the InGaAs absorption region and estimate the absorption efficiency using a three-dimensional finite-difference time-domain method. We optimize the InGaAs absorption region in order to attain a bandwidth of 46 GHz. We also report our latest experimental demonstration of all-silicon microresonator enhanced linear-absorption photodetectors using defect-state absorption in pn-diode-integrated microresonators. Our initial experiments reveal the measured bandwidths to be exceeding 10 GHz.

Citation Download Citation

Andrew W. Poon, Shaoqi Feng, Yu Li, Yu Geng, and Kei May Lau "All-silicon and epitaxially grown III-V-on-silicon photodetectors for on-chip optical interconnection applications", Proc. SPIE 8628, Optoelectronic Integrated Circuits XV, 86280E (6 March 2013); https://doi.org/10.1117/12.2006565

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