Paper
14 March 2013 Simulation of nanoscale ITO top grating of GaN LED
Author Affiliations +
Abstract
Today’s advanced technology allows engineers to fabricate GaN LEDs with various heights, widths, shapes, and materials. Total internal reflection is a key factor in GaN LED design, because all light that is created inside the LED is lost unless it approaches the chip to air interface at an angle less than 23.58° with respect to the normal. The narrow range of angles at which light can successfully escape the chip is a result of the large difference in refractive indices between GaN and air. Adding a layer of ITO to the GaN reduces the difference in refractive indices between steps and increases the critical angle to 28.4°. Transmitting from ITO into epoxy reduces this difference in refractive indices again, bringing the critical angle to 47.9°. Because a higher critical angle should allow more light to escape the LED, we focus on enhancing light extraction efficiency of GaN LED's that utilize an ITO to epoxy interface using FDTD simulations. The simulation results show us that increasing the critical angle to 47.9° improves light extraction by 40%, proving that the critical angle does play a significant role in light extraction. From this initial result, we then compare light extraction efficiencies of ITO and GaN gratings over varied grating periods, and show that adding an Ag reflection layer improves overall efficiency. Finally, we show that the light extraction for LED's utilizing an Ag reflection layer is highly dependent on the sapphire substrate thickness.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gabriel Halpin, Xiaomin Jin, Greg Chavoor, Xing-Xing Fu, Xiang-Ning Kang, and Guo-Yi Zhang "Simulation of nanoscale ITO top grating of GaN LED", Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86190I (14 March 2013); https://doi.org/10.1117/12.2001071
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Light emitting diodes

Gallium nitride

Silver

Epoxies

Sapphire

Refractive index

Finite-difference time-domain method

RELATED CONTENT

Study of nano-scale ITO top grating of GaN LED
Proceedings of SPIE (March 07 2014)
Light extraction analysis for GaN-based LEDs
Proceedings of SPIE (February 08 2007)
Stress analysis of transferred thin GaN LED by Au Si...
Proceedings of SPIE (September 14 2005)
Optical design of large-area GaN-based LEDs
Proceedings of SPIE (July 03 2003)

Back to Top