Paper
15 March 2013 On the wavelength dependence of femtosecond laser interactions inside band gap solids
S. Leyder, D. Grojo, Ph. Delaporte, M. Lebugle, W. Marine, N. Sanner, M. Sentis, O. Utéza
Author Affiliations +
Abstract
3D laser microfabrication inside narrow band gap solids like semiconductors will require the use of long wavelength intense pulses. We perform an experimental study of the multiphoton-avalanche absorption yields and thresholds with tightly focused femtosecond laser beams at wavelengths: 1.3μm and 2.2μm. For comparisons, we perform the experiments in two very different materials: silicon (semiconductor, ∼1.1 eV indirect bandgap) and fused silica (dielectric, ∼9 eV direct bandgap). For both materials, we find only moderate differences while the number of photons required to cross the band gap changes from 2 to 3 in silicon and from 10 to 16 in fused silica.
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S. Leyder, D. Grojo, Ph. Delaporte, M. Lebugle, W. Marine, N. Sanner, M. Sentis, and O. Utéza "On the wavelength dependence of femtosecond laser interactions inside band gap solids", Proc. SPIE 8611, Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XIII, 861113 (15 March 2013); https://doi.org/10.1117/12.2003545
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KEYWORDS
Silicon

Silica

Absorption

Femtosecond phenomena

Ionization

Semiconductors

Solids

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