Deterministically isolated gratings through the directed self-assembly of block copolymers

Gregory S. Doerk; Joy Y. Cheng; Charles T. Rettner; Srinivasan Balakrishnan; Noel Arellano; Daniel P. Sanders

doi:10.1117/12.2011629

26 March 2013 Deterministically isolated gratings through the directed self-assembly of block copolymers

Gregory S. Doerk, Joy Y. Cheng, Charles T. Rettner, Srinivasan Balakrishnan, Noel Arellano, Daniel P. Sanders

Proceedings Volume 8680, Alternative Lithographic Technologies V; 86800Y (2013) https://doi.org/10.1117/12.2011629
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Pattern customization is a necessary requirement to achieve circuit-relevant patterns using block copolymer directed self-assembly (DSA), but the edge-placement error associated with customization steps after DSA is anticipated to be at the scale of the pattern features, particularly as a result of overlay error. Here we present a new self-aligned approach to the customization of line-space patterns fabricated through chemical epitaxy. A partially inorganic chemical pattern contains a prepattern with pinning lines and non-guiding “blockout” features to which the block copolymer domains are aligned. Pattern transfer results in a line-space pattern with self-aligned customizations directly determined by the prepattern. In the transferred pattern, pinning lines determine the placement of single-line gaps while blockout features determine the placement and size of perpendicular trim across lines. By using designed two-dimensional chemical patterns, this self-aligned, bidirectional customization scheme enables the fabrication of high-resolution circuit-relevant patterns with fewer trim/exposure steps.

Citation Download Citation

Gregory S. Doerk, Joy Y. Cheng, Charles T. Rettner, Srinivasan Balakrishnan, Noel Arellano, and Daniel P. Sanders "Deterministically isolated gratings through the directed self-assembly of block copolymers", Proc. SPIE 8680, Alternative Lithographic Technologies V, 86800Y (26 March 2013); https://doi.org/10.1117/12.2011629

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