Mix & match electron beam & scanning probe lithography for high throughput sub-10 nm lithography

Marcus Kaestner; Manuel Hofer; Ivo W. Rangelow

doi:10.1117/12.2011535

26 March 2013 Mix & match electron beam & scanning probe lithography for high throughput sub-10 nm lithography

Marcus Kaestner, Manuel Hofer, Ivo W. Rangelow

Proceedings Volume 8680, Alternative Lithographic Technologies V; 868019 (2013) https://doi.org/10.1117/12.2011535
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

The prosperous demonstration of a technique able to produce features with single nanometer (SN) resolution could guide the semiconductor industry into the desired beyond CMOS era. In the lithographic community immense efforts are being made to develop extreme ultra-violet lithography (EUVL) and multiple-e-beam direct-write systems as possible successor for next generation lithography (NGL). However, patterning below 20 nm resolution and sub-10 nm overlay alignment accuracy becomes an extremely challenging quest. Herein, the combination of electron beam lithography (EBL) or EUVL with the outstanding capabilities of closed-loop scanning proximal probe nanolithography (SPL) reveals a promising way to improve both patterning resolution and reproducibility in combination with excellent overlay and placement accuracy. In particular, the imaging and lithographic resolution capabilities provided by scanning probe microscopy (SPM) methods touches the atomic level, which expresses the theoretical limit of constructing nanoelectronic devices. Furthermore, the symbiosis between EBL (EUVL) and SPL expands the process window of EBL (EUVL) far beyond state-of-the-art allowing SPL-based pre- and post-patterning of EBL (EUVL) written features at critical dimension level with theoretically nanometer precise pattern overlay alignment. Moreover, we can modify the EBL (EUVL) pattern before as well as after the development step. In this paper we demonstrate proof of concept using the ultra-high resolution molecular glass resist calixarene. Therefor we applied Gaussian E-beam lithography system operating at 10 keV and a home-developed SPL set-up. The introduced Mix and Match lithography strategy enables a powerful use of our SPL set-up especially as post-patterning tool for inspection and repair functions below the sub-10 nm critical dimension level.

Citation Download Citation

Marcus Kaestner, Manuel Hofer, and Ivo W. Rangelow "Mix & match electron beam & scanning probe lithography for high throughput sub-10 nm lithography", Proc. SPIE 8680, Alternative Lithographic Technologies V, 868019 (26 March 2013); https://doi.org/10.1117/12.2011535

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