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Proceedings Article

Millimeter and terahertz detectors based on plasmon excitation in InGaAs/InP HEMT devices

[+] Author Affiliations
Nima Nader Esfahani, Robert E. Peale

Univ. of Central Florida (United States)

Walter R. Buchwald

Solid State Scientific Corp. (United States)

Joshua R. Hendrickson, Justin W. Cleary

Air Force Research Lab. (United States)

Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 86240Q (March 27, 2013); doi:10.1117/12.2006137
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From Conference Volume 8624

  • Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI
  • Laurence P. Sadwick; Créidhe M. O'Sullivan
  • San Francisco, California, USA | February 02, 2013

abstract

Recent progress in the investigation of millimeter-wave and THz detectors based on plasmon excitation in the twodimensional electron gas (2DEG) of a high electron mobility transistor (HEMT) is reported. A tunable resonant polarized photoresponse to mm-wave radiation in the frequency range of 40 to 110 GHz is demonstrated for a gratinggated InGaAs/InP based device. The gate consisted of a metal grating with period of 9 μm specifically designed for excitation of sub-THz plasmons. The resonant excitation of plasmons, which shifts with gate-bias, changes the channel conductance. This resonant change in channel conductance enables potential applications in chip-scale frequency-agile detectors, which can be scaled to mid-THz frequencies. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Nima Nader Esfahani ; Robert E. Peale ; Walter R. Buchwald ; Joshua R. Hendrickson and Justin W. Cleary
" Millimeter and terahertz detectors based on plasmon excitation in InGaAs/InP HEMT devices ", Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 86240Q (March 27, 2013); doi:10.1117/12.2006137; http://dx.doi.org/10.1117/12.2006137


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