Semiconductor source of entangled photons at room temperature

A. Orieux; A. Eckstein; A. Lemaître; P. Filloux; T. Coudreau; P. Milman; A. Keller; I. Favero; G. Leo; S. Ducci

doi:10.1117/12.2004267

29 March 2013 Semiconductor source of entangled photons at room temperature

A. Orieux, A. Eckstein, A. Lemaître, P. Filloux, T. Coudreau, P. Milman, A. Keller, I. Favero, G. Leo, S. Ducci

Proceedings Volume 8635, Advances in Photonics of Quantum Computing, Memory, and Communication VI; 863519 (2013) https://doi.org/10.1117/12.2004267
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

In recent years, great efforts have been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot and the four wave mixing in a Silicon waveguide have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device. Here we present a source consisting of a multilayer AlGaAs waveguide grown on a GaAs substrate and then chemically etched to achieve lateral confinement in a ridge. The structure design is such that a pump beam (around 759 nm), impinging on the waveguide surface with an incidence angle θ generates two counterpropagating orthogonally polarized beams (around 1518 nm). The waveguide core is surrounded by distributed Bragg reectors to enhance the pump field within the device. We demonstrate the direct emission of polarization entangled photons by pumping the device at two symmetric angles of incidence corresponding to frequency degeneracy and performing a quantum tomography measurement. Most common entanglement witnesses are satisfied and a raw fidelity of F = 0:86 to a Bell state is obtained. These results open the route to the demonstration of other interesting features of our device such as the generation of hyper-entangled states via the control of the frequency correlation degree through the spatial and spectral pump beam profile, leading to a new generation of completely integrated devices for quantum information.

Citation Download Citation

A. Orieux, A. Eckstein, A. Lemaître, P. Filloux, T. Coudreau, P. Milman, A. Keller, I. Favero, G. Leo, and S. Ducci "Semiconductor source of entangled photons at room temperature ", Proc. SPIE 8635, Advances in Photonics of Quantum Computing, Memory, and Communication VI, 863519 (29 March 2013); https://doi.org/10.1117/12.2004267

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photons

Waveguides

Polarization

Semiconductors

Quantum information

Picosecond phenomena

Entangled states

Show All Keywords

Keywords/Phrases

Search In:

Publication Years